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Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description:
The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in
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Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description:
The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c
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Authors:
Yakovlev, Nikita N. |
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Stepanov, Sergey I. |
Chikiryaka, Andrei V. |
Timashov, R. B. |
Scheglov, Mikhail P. |
Butenko, Pavel N. |
Almaev, D. A. |
Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description:
The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range
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Authors:
Мочалов, Леонид Александрович |
Кудряшов, Михаил Александрович |
Поляков, Александр Яковлевич |
Прохоров, Игорь Олегович |
Вшивцев, Максим Анатольевич |
Кудряшова, Юлия Павловна |
Князев, Александр Владимирович |
Алмаев, Алексей Викторович |
Яковлев, Никита Николаевич |
Черников, Евгений Викторович |
Ерзакова, Надежда Николаевна
Source: Известия высших учебных заведений. Физика. 2023. Т. 66, № 7. С. 66-73
Type: статьи в журналах
Date: 2023
Description:
Впервые тонкие пленки системы β-Ga2O3:Zn (содержание Zn от 0 до 10 ат.%) были получены методом плазмохимического осаждения из газовой фазы (PECVD) в условиях низкотемпературной неравновесной плазмы ин
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Authors:
Polyakov, Alexander |
Nikolaev, Vladimir I. |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description:
We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3
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Source: Вестник Томского государственного университета. Химия. 2020. № 17. С. 51-68
Type: статьи в журналах
Date: 2020
Description:
Вода и водосодержащие системы являются весьма чувствительными к внешним воздействиям различной природы. Известно, что обработка таких объектов даже низкоэнергетическими полями может существенно измени
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Authors:
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Syvorotka, I. I. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Izhnin, Igor I.
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description:
The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i
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Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description:
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam
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Source: Известия высших учебных заведений. Физика. 2019. Т. 62, № 5. С. 175-176
Type: статьи в журналах
Date: 2019
Source: Physical Review E. 2018. Vol. 97, № 4. P. 043307-1-043307-11
Type: статьи в журналах
Date: 2018
Description:
The electrical properties of conducting meshes are investigated numerically by solving the related Kirchhoff equations with the Lanczos algorithm. The method is directly inspired by the recursion tech
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Source: Semiconductor science and technology. 2018. Vol. 33, № 9. P. 095011 (1-8)
Type: статьи в журналах
Date: 2018
Description:
The effects of fast neutron (up to 1.75 × 1020 f.n. cm–2) and fast plus thermal neutron (up to 3.5 × 1020 f.t.n. cm–2) irradiation on the electrical properties and crystal lattice of GaN films have be
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Source: Известия высших учебных заведений. Физика. 2018. Т. 61, № 3. С. 82-88
Type: статьи в журналах
Date: 2018
Description:
Систематизированы данные по электрическим, структурным и магнитным свойствам арсенида галлия, легированного железом и полученного разными методами. Рассмотрены условия получения структур с магнитными
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Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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Source: Chemical physics letters. 2015. Vol. 639. P. 93-98
Type: статьи в журналах
Date: 2015
Description:
The dipole–quadrupole and dipole–octupole polarizabilities of CCl4 have been determined from collision-induced light scattering (CILS) spectrum. (Hyper)polarizabilities were calculated at the CCSD(T)
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Source: Composites science and technology. 2015. Vol. 106. P. 85-92
Type: статьи в журналах
Date: 2015