Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

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Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films	3 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1016/j.mtcomm.2022.105241

Title: Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Creator: Yakovlev, Nikita N.
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Almaev, Aleksei V.
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Nikolaev, Vladimir I.
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Kushnarev, Bogdan O.
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Pechnikov, Aleksei I.
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Stepanov, Sergey I.
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Chikiryaka, Andrei V.
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Timashov, R. B.
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Scheglov, Mikhail P.
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Butenko, Pavel N.
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Almaev, D. A.
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Chernikov, Evgeniy V.
Date: 2023
DOI: 10.1016/j.mtcomm.2022.105241
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2. A qualitative mechanism of gas sensitivity for the In2O3-Ga2O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2O3, κ(ε)-Ga2O3 and In2O3-Ga2O3 films were compared. The advantage of the In2O3-Ga2O3 mixed compounds films compared with Ga2O3 and In2O3 films is a low base electrical resistivity with a relatively high gas sensitivity.