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Source: IEEE sensors journal. 2023. Vol. 23, № 14. P. 15530-15536
Type: статьи в журналах
Date: 2023
Description:
In this report, we consider the effect of radiation with radiation energy below the β -Ga 2 O 3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium o
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Authors:
Yakovlev, Nikita N. |
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Stepanov, Sergey I. |
Chikiryaka, Andrei V. |
Timashov, R. B. |
Scheglov, Mikhail P. |
Butenko, Pavel N. |
Almaev, D. A. |
Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description:
The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range
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Authors:
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kopyev, Viktor V. |
Shapenkov, Sevastian |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Deng, Jinxiang |
Izaak, Tatyana I. |
Chikiryaka, Andrei V. |
Scheglov, Mikhail P. |
Zarichny, Anton
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description:
The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor
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Authors:
Nikolaev, Vladimir I. |
Polyakov, Alexander |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Guzilova, Lyubov I. |
Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description:
Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne
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Authors:
Polyakov, Alexander |
Nikolaev, Vladimir I. |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description:
We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Zinoviev, Mikhail M. |
Yudin, Nikolay N. |
Podzyvalov, Sergey N. |
Erzakova, Nadezhda N. |
Chikiryaka, Andrei V. |
Shcheglov, Mikhail P. |
Baalbaki, Houssain A. |
Olshukov, Alexey S.
Source: Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Type: статьи в журналах
Date: 2022
Description:
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4
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Source: Semiconductors. 2022. Vol. 56, № 9. P. 707-711
Type: статьи в журналах
Date: 2022
Description:
The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentra
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Source: Semiconductors. 2021. Vol. 55, № 3. P. 346-353
Type: статьи в журналах
Date: 2021
Description:
The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epi
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Source: IEEE sensors journal. 2021. Vol. 21, № 13. P. 14636-14644
Type: статьи в журналах
Date: 2021
Description:
Electrical conductivity and gas sensitivity of α-Ga2O2/ ε(κ)-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was fo
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Source: ECS meeting abstracts. 2021. Vol. MA2021-01, № 56. P. 1475
Type: статьи в журналах
Date: 2021
Description:
Miniature O2 sensors with low energy consumption are of practical interest for the chemical and metallurgical industries, development of systems for analyzing the performance of internal combustion en
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Source: Materials physics and mechanics. 2021. Vol. 47, № 4. P. 577-581
Type: статьи в журналах
Date: 2021
Description:
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture o
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Source: Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
Type: статьи в журналах
Date: 2021
Description:
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthe
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Source: Superlattices and microstructures. 2021. Vol. 151. P. 106835 (1-12)
Type: статьи в журналах
Date: 2021
Description:
Cr2O3 thin films were synthesized by RF magnetron sputtering of a Cr target in an oxygen-argon plasma. The effect of annealing temperature on the structural, electrical, and gas-sensitive properties o
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