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Authors:
Yakovlev, Nikita N. |
Almaev, Aleksei V. |
Butenko, Pavel N. |
Tetelbaum, David |
Mikhaylov, Alexey |
Nikolskaya, Alena |
Pechnikov, Aleksei I. |
Stepanov, Sergey I. |
Boiko, Mikhail |
Chikiryaka, Andrei V. |
Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description:
The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kopyev, Viktor V. |
Nikolaev, Vladimir I. |
Butenko, Pavel N. |
Deng, Jinxiang |
Pechnikov, Aleksei I. |
Korusenko, Petr M. |
Koroleva, Aleksandra |
Zhizhin, Evgeniy V.
Source: Chemosensors. 2023. Vol. 11, № 6. P. 325 (1-15)
Type: статьи в журналах
Date: 2023
Description:
The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor p
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Authors:
Almaev, Aleksei V. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Chikiryaka, Andrei V. |
Yakovlev, Nikita N. |
Usseinov, Abay B. |
Karipbayev, Zhakyp T. |
Akilbekov, Abdirash T. |
Koishybayeva, Zhanymgul K. |
Popov, Anatoli I.
Source: Materials. 2023. Vol. 16, № 1. P. 342 (1-16)
Type: статьи в журналах
Date: 2023
Description:
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically
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Authors:
Yakovlev, Nikita N. |
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Stepanov, Sergey I. |
Chikiryaka, Andrei V. |
Timashov, R. B. |
Scheglov, Mikhail P. |
Butenko, Pavel N. |
Almaev, D. A. |
Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description:
The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range
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Authors:
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kopyev, Viktor V. |
Shapenkov, Sevastian |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Deng, Jinxiang |
Izaak, Tatyana I. |
Chikiryaka, Andrei V. |
Scheglov, Mikhail P. |
Zarichny, Anton
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description:
The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor
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Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description:
He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Zinoviev, Mikhail M. |
Yudin, Nikolay N. |
Podzyvalov, Sergey N. |
Erzakova, Nadezhda N. |
Chikiryaka, Andrei V. |
Shcheglov, Mikhail P. |
Baalbaki, Houssain A. |
Olshukov, Alexey S.
Source: Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Type: статьи в журналах
Date: 2022
Description:
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4
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Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
Type: статьи в журналах
Date: 2022
Description:
The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3
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Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description:
Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo
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Source: Semiconductors. 2021. Vol. 55, № 3. P. 346-353
Type: статьи в журналах
Date: 2021
Description:
The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epi
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Source: IEEE sensors journal. 2021. Vol. 21, № 13. P. 14636-14644
Type: статьи в журналах
Date: 2021
Description:
Electrical conductivity and gas sensitivity of α-Ga2O2/ ε(κ)-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was fo
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Source: ECS meeting abstracts. 2021. Vol. MA2021-01, № 56. P. 1475
Type: статьи в журналах
Date: 2021
Description:
Miniature O2 sensors with low energy consumption are of practical interest for the chemical and metallurgical industries, development of systems for analyzing the performance of internal combustion en
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Source: Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
Type: статьи в журналах
Date: 2021
Description:
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthe
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