HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

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HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.18149/MPM.4742021_4

Title: HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
Creator: Stepanov, Sergey I.
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Nikolaev, Vladimir I.
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Almaev, Aleksei V.
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Pechnikov, Aleksei I.
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Scheglov, M. P.
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Chikiryaka, A. V.
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Kushnarev, Bogdan O.
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Polyakov, A. Y.
Date: 2021
DOI: 10.18149/MPM.4742021_4
Description: Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2.

Created: 20-05-2022

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Радиофизический факультет HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer