The effect of the gaseous medium composition on the electrically conductive properties of In2O3−Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100−550◦C, the In2O3−Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3−Ga2O3 films to gases is proposed.
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