Электронная библиотека (репозиторий) Томского государственного университета

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Add   Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Chikiryaka, Andrei V. | Timashov, R. B. | Scheglov, Mikhail P. | Butenko, Pavel N. | Almaev, D. A. | Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Add   Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kopyev, Viktor V. | Shapenkov, Sevastian | Yakovlev, Nikita N. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Deng, Jinxiang | Izaak, Tatyana I. | Chikiryaka, Andrei V. | Scheglov, Mikhail P. | Zarichny, Anton
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description: The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor ... More
Add   Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
Authors: Nikolaev, Vladimir I. | Polyakov, Alexander | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I. | Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne ... More
Add   Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure
Authors: Almaev, D. A. | Almaev, Aleksei V. | Kopyev, Viktor V. | Nikolaev, Vladimir I. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boyko, M. E. | Butenko, Pavel N. | Scheglov, Mikhail P.
Source: Technical physics letters. 2022. Vol. 48, № 11. P. 61-64
Type: статьи в журналах
Date: 2022
Description: α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties ... More
Add   Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Authors: Polyakov, Alexander | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description: We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 ... More
Add   Gas sensors based on pseudohexagonal phase of gallium oxide
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Butenko, Pavel | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Yakovlev, Nikita N. | Sinyugin, Igor | Shapenkov, Sevastian | Scheglov, Mikhail P.
Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
Type: статьи в журналах
Date: 2022
Description: The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3 ... More
Add   Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Yakovlev, Nikita N. | Butenko, Pavel N. | Stepanov, Sergey I. | Pechnikov, Aleksei I. | Scheglov, Mikhail P. | Chernikov, Evgeniy V.
Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description: Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo ... More
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