Электронная библиотека (репозиторий) Томского государственного университета
Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.

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Add   Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Add   Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots
Authors: Izhnin, Igor I. | Pishchagin, Anton A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Fitsych, Olena I.
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More
Add   Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
Authors: Pishchagin, Anton A. | Kokhanenko, Andrey P. | Serokhvostov, V. Yu. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Voytsekhovskiy, Alexander V.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener ... More
Add   Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit
Authors: Barko, A. V. | Levashkin, A. G. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 9-11
Type: статьи в сборниках
Date: 2016
Add   Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
Authors: Lyapunov, D. V. | Grigoryev, Denis V. | Korotaev, A. G. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Iznin, I. I. | Savytskyy, Hrygory V. | Bonchik, A. U. | Dvoretsky, Sergei A. | Pishchagin, Anton A. | Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More
Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
Authors: Pishchagin, Anton A. | Serokhvostov, V. Yu. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
Add   Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Influence of edge energy on modeling the growth kinetics of quantum dots
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Add   Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Add   Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films
Authors: Romanov, I. V. | Dyagterenko, K. M. | Kopylova, Tatyana N. | Kokhanenko, Andrey P. | Nikonova, E. N. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Add   Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217
Type: статьи в журналах
Date: 2015
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
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