Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

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Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots	993 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/741/1/012015

Title: Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
Creator: Pishchagin, Anton A.
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Kokhanenko, Andrey P.
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Serokhvostov, V. Yu.
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Dzyadukh, Stanislav M.
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Nikiforov, Alexander I.
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Voytsekhovskiy, Alexander V.
Date: 2016
DOI: 10.1088/1742-6596/741/1/012015
Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured.