Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition	954 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/741/1/012097

Title: Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
Creator: Lyapunov, D. V.
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Grigoryev, Denis V.
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Korotaev, A. G.
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Voytsekhovskiy, Alexander V.
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Kokhanenko, Andrey P.
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Iznin, I. I.
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Savytskyy, Hrygory V.
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Bonchik, A. U.
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Dvoretsky, Sergei A.
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Pishchagin, Anton A.
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Mikhailov, Nikolay N.
Date: 2016
DOI: 10.1088/1742-6596/741/1/012097
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films

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collection(s): Радиофизический факультет | Сибирский физико-технический институт
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Language: eng

Created: 01-03-2018

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Радиофизический факультет Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition