Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots

Эндаумент фонд ТГУ!
Впиши своё имя в историю университета
- Сделать пожертвование -

Add to "Quick Collection"

Description	Size	Format
Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots	763 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1186/s11671-017-1916-0

Title: Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots
Creator: Izhnin, Igor I.
|
Pishchagin, Anton A.
|
Kokhanenko, Andrey P.
|
Voytsekhovskiy, Alexander V.
|
Dzyadukh, Stanislav M.
|
Nikiforov, Alexander I.
|
Fitsych, Olena I.
Date: 2017
DOI: 10.1186/s11671-017-1916-0
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels.