Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | Voytsekhovskiy, Alexander V.

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Add   The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Add   Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description: The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency ... More
Add   Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More
Add   Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigor'ev, D. V. | Lyapunov, D. V. | Nesmelov, Sergey N.
Source: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Type: статьи в журналах
Date: 2017
Description: Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–xCdxTe (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of ... More
Add   Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Add   Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 970-977
Type: статьи в журналах
Date: 2015
Description: The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencie ... More
Add   Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014
Add   Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
Authors: Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Izhnin, Ihor I.
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 02001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructure ... More
Add   Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Sidorov, Georgiy Yu. | Varavin, Vasilii S. | Vasilev, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Add   Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Journal of electronic materials. 2018. Vol. 47, № 5. P. 2694-2702
Type: статьи в журналах
Date: 2018
Description: The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated ... More
Add   Generation of surface defects in epitaxial CdxHg1-xTe layers by soft X-ray radiation of laser plasma
Authors: Voytsekhovskiy, Alexander V. | Ananin, O. B. | Izhnin, Igor I. | Melekhov, A. P. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Sredin, V. G.
Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2197-2200
Type: статьи в журналах
Date: 2018
Description: The possibility is demonstrated of a selective action of soft X-ray radiation on atoms of an individual element on the surface of a crystal constructed of atoms of several chemical elements.
Add   Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu. | Voytsekhovskiy, Alexander V.
Source: Vacuum. 2018. Vol. 158. P. 136-140
Type: статьи в журналах
Date: 2018
Description: The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer depo ... More
Add   Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Journal of physics and chemistry of solids. 2017. Vol. 102. P. 42-48
Type: статьи в журналах
Date: 2017
Description: Admittance of MIS structures based on MBE n-Hg1-xCdxTe (x=0.22–0.23) with Al2O3 as insulator is experimentally investigated for the cases of the presence and absence of near-surface graded-gap layers ... More
Add   Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2015. Vol. 58, № 4. P. 540-551
Type: статьи в журналах
Date: 2015
Description: Capacitance-voltage characteristics (CV characteristics) of MIS structures based on graded-gap MBE Hg1–xCdxTe (x = 0.22–0.23) with a two-layer plasma-chemical insulator SiO2/Si3N4 are studied under va ... More
Add   Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
Authors: Syvorotka, I. I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Izhnin, Igor I.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
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