Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.

Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339

Type: статьи в журналах

Date: 2021

Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More

Authors: Burlakov, I. D. | Kulchitskii, N. A. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich

Source: Journal of communications technology and electronics. 2021. Vol. 66, № 9. P. 1084-1091

Type: статьи в журналах

Date: 2021

Description: We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to redu ... More