Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

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Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe	880 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1051/epjconf/201713302001

Title: Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
Creator: Pociask-Bialy, Malgorzata
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Voytsekhovskiy, Alexander V.
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Nesmelov, Sergey N.
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Dzyadukh, Stanislav M.
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Izhnin, Ihor I.
Date: 2017
DOI: 10.1051/epjconf/201713302001
Description: Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.