Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator

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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator	914 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1002/pssc.201510227

Title: Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Creator: Voytsekhovskiy, Alexander V.
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Dzyadukh, Stanislav M.
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Vasilev, Vladimir V.
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Varavin, Vasilii S.
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Dvoretsky, Sergei A.
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Mikhailov, Nikolay N.
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Yakushev, Maxim V.
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Sidorov, Georgiy Y.
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Nesmelov, Sergey N.
Date: 2016
DOI: 10.1002/pssc.201510227
Description: The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency range 10 kHz-1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al2O3 have a large enough insulator capacitance (compared to SiO2/Si3N4), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat-band voltage. The effective charge density found from the value of the flat-band voltage and slow interface trap density for structures with Al2O3 comparable with the corresponding densities for structures with SiO2/Si3N4.