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Authors:
Grigoryev, Denis V. |
Voytsekhovskiy, Alexander V. |
Lozovoy, Kirill A. |
Tarasenko, Viktor Fedotovich |
Ripenko, V. S. |
Shulepov, Mikhail A. |
Erofeev, Mikhail V. |
Yakushev, Maxim V. |
Dvoretsky, Sergei A. |
Korotaev, Alexander G. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S.
Source: Surface and coatings technology. 2020. Vol. 387. P. 125527 (1-5)
Type: статьи в журналах
Date: 2020
Description:
In this work the results of the experimental investigation of the influence of the high-frequency nanosecond
Authors:
Lyapunov, D. V. |
Grigoryev, Denis V. |
Korotaev, A. G. |
Voytsekhovskiy, Alexander V. |
Kokhanenko, Andrey P. |
Iznin, I. I. |
Savytskyy, Hrygory V. |
Bonchik, A. U. |
Dvoretsky, Sergei A. |
Pishchagin, Anton A. |
Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description:
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe
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Source: Pulsed lasers and laser applications AMPL-2017 : the 13 International conference, September 10-15, 2017, Tomsk, Russia : abstracts. Tomsk, 2017. P. 139-140
Type: статьи в сборниках
Date: 2017
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Korotaev, A. G. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Journal of electronic materials. 2021. Vol. 50, № 8. P. 4599-4605
Type: статьи в журналах
Date: 2021
Description:
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it
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Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Authors:
Mynbaev, Karim D. |
Świątek, Zbigniew |
Morgiel, J. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V. |
Izhnin, Igor I. |
Fitsych, Olena I. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V.
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the
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Authors:
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description:
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular
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Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Lyapunov, D. V. |
Lozovoy, Kirill A. |
Tarasenko, Viktor Fedotovich |
Shulepov, Mikhail A. |
Erofeev, Mikhail V. |
Ripenko, V. |
Dvoretsky, Sergei A. |
Grigoryev, Denis V. |
Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description:
The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e
... More
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Authors:
Izhnin, A. I. |
Mynbaev, Karim D. |
Bazhenov, N. L. |
Shilyaev, A. V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Fitsych, Olena I. |
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I.
Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394
Type: статьи в журналах
Date: 2013