Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

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DOI Доступ к ресурсу на сайте издателя			10.1063/1.4872246

Title: Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
Creator: Dvoretsky, Sergei A.
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Mynbaev, Karim D.
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Fitsych, Olena I.
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Mikhailov, Nikolay N.
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Varavin, Vasilii S.
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Pociask-Bialy, Malgorzata
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Voytsekhovskiy, Alexander V.
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Sheregii, E.
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Izhnin, Igor I.
Contributor: Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники
Date: 2014
DOI: 10.1063/1.4872246

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collection(s): Радиофизический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Rights: Resource access is available in the premises of Research Library
Type: статьи в журналах
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Language: rus

Created: 17-07-2014

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Радиофизический факультет Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic