Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

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DOI Доступ к ресурсу на сайте издателя			10.1016/j.surfcoat.2020.125760

Title: Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Creator: Voytsekhovskiy, Alexander V.
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Izhnin, Igor I.
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Mynbaev, Karim D.
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Nesmelov, Sergey N.
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Dzyadukh, Stanislav M.
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Varavin, Vasilii S.
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Dvoretsky, Sergei A.
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Mikhailov, Nikolay N.
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Yakushev, Maxim V.
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Korotaev, A. G.
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Sidorov, Georgiy Yu.
Date: 2020
DOI: 10.1016/j.surfcoat.2020.125760
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn