Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2014. Vol. 551. P. 92-97
Type: статьи в журналах
Date: 2014
Add   Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014
Add   Single element 2D materials and methods of their epitaxial synthesis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V. | Vinarskiy, V. P. | Fitsych, Olena I.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 43-
Type: статьи в сборниках
Date: 2021
Description: Graphene-like allotrope modifications of single elements, such as borophene (B), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosporene (P), arsenene (As), antimonene (Sb), bismuthene ... More
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Light emission from CdHgTe–based nanostructures
Authors: Mynbaev, K. D. | Bazhenov, N. L. | Izhnin, A. I. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Shilyaev, A. V.
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Ripenko, V. | Dvoretsky, Sergei A. | Grigoryev, Denis V. | Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e ... More
Add   Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G.
Source: Journal of applied physics. 2022. Vol. 132, № 15. 155702-1-155702-16
Type: статьи в журналах
Date: 2022
Description: A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of f ... More
Add   Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Syvorotka, I. I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Bonchyk, A. Yu. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V.
Source: Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Type: статьи в журналах
Date: 2020
Description: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
Add   Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air
Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Voytsekhovskiy, Alexander V.
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012025 (1-5)
Type: статьи в журналах
Date: 2015
Description: In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are di ... More
Add   Admittance of barrier structures based on mercury cadmium telluride
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Add   Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit
Authors: Barko, A. V. | Levashkin, A. G. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 9-11
Type: статьи в сборниках
Date: 2016
Add   Properties of arsenic-implanted Hg1-xCdxTe MBE films
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, Olena I. | Bonchyk, Oleksandr Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V. | Jakiela, Rafal | Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical ... More
Add   Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description: The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in ... More

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