Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

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Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1007/s13204-020-01327-9

Title: Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
Creator: Izhnin, Igor I.
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Mynbaev, Karim D.
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Syvorotka, I. I.
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Korotaev, Alexander G.
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Voytsekhovskiy, Alexander V.
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Fitsych, Olena I.
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Varavin, Vasilii S.
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Marin, Denis V.
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Bonchyk, A. Yu.
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Mikhailov, Nikolay N.
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Yakushev, Maxim V.
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Świątek, Zbigniew
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Morgiel, Jerzy
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Jakiela, Rafal
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Savytskyy, Hrygory V.
Date: 2020
DOI: 10.1007/s13204-020-01327-9
Description: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced

Created: 03-03-2021

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Радиофизический факультет Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy