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Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Korotaev, A. G. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Journal of electronic materials. 2021. Vol. 50, № 8. P. 4599-4605
Type: статьи в журналах
Date: 2021
Description:
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it
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Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description:
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu
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Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description:
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in
... More
Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description:
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency
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Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description:
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam
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Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 44-
Type: статьи в сборниках
Date: 2021
Description:
The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscr
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Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description:
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten
... More
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description:
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye
... More
Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description:
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier
... More