Электронная библиотека (репозиторий) Томского государственного университета
Chulkov, Evgueni V. | топологические изоляторы

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Source: Semiconductors. 2015. Vol. 49, № 12. P. 1550-1556
Type: статьи в журналах
Date: 2015
Description: The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between ... More
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045423-1-045423-8
Type: статьи в журналах
Date: 2015
Description: The atomic structure of ultrathin iron films deposited on the (0001) surface of the topological insulator Bi2Se3 is analyzed by surface x-ray absorption spectroscopy. Iron atoms deposited on a Bi2Se3 ... More
Source: Nanomaterials. 2023. Vol. 13, № 1. P. 38 (1-14)
Type: статьи в журналах
Date: 2023
Description: Using relativistic spin-polarized density functional theory calculations we investigate magnetism, electronic structure and topology of the ternary thallium gadolinium dichalcogenides TlGdZ2 (Z = Se a ... More
Source: Physical Review B. 2015. Vol. 92, № 16. P. 165309-1-165309-9
Type: статьи в журналах
Date: 2015
Description: We propose a way to break the time-reversal symmetry at the surface of a three-dimensional topological insulator that combines features of both surface magnetic doping and magnetic proximity effect. B ... More
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: Physical Review B. 2013. Vol. 88, № 19. P. 195431-1-195431-4
Type: статьи в журналах
Date: 2013
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d ... More
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи в журналах
Date: 2016
Description: Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons ... More
Source: Письма в журнал экспериментальной и теоретической физики. 2012. Т. 96, вып. 11/12. С. 799-803
Type: статьи в журналах
Date: 2012
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
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