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Authors:
Maaß, Henriette |
Seibel, Christoph |
Tusche, Christian |
Eremeev, Sergey V. |
Peixoto, Thiago R. F. |
Tereshchenko, Oleg E. |
Kokh, Konstantin A. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Bentmann, Hendrik |
Reinert, Friedrich
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the
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Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Authors:
Roy, Sumalay |
Mohseni, Katayoon |
Ernst, Arthur |
Otrokov, Mikhail M. |
Vergniory, M. G. |
Mussler, G. |
Kampmeier, J. |
Grützmacher, D. |
Tusche, C. |
Schneider, J. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review B. 2014. Vol. 90, № 15. P. 155456-1-155456-9
Type: статьи в журналах
Date: 2014
Authors:
Roy, Sumalay |
Ernst, Arthur |
Mohseni, Katayoon |
Tusche, C. |
Vergniory, M. G. |
Menshchikova, Tatiana V. |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Schneider, J. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review Letters. 2014. Vol. 113, № 11. P. 116802-1-116802-5
Type: статьи в журналах
Date: 2014