Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

doi:10.1103/PhysRevB.91.075307

Эндаумент фонд ТГУ!
Впиши своё имя в историю университета
- Сделать пожертвование -

Add to "Quick Collection"

Description	Size	Format
Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator	785 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1103/PhysRevB.91.075307

#топологические изоляторы

#электронные состояния

#селенид висмута

#селенид цинка

Title: Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator
Creator: Menshov, V. N.
|
Eremeev, Sergey V.
|
Echenique, Pedro Miguel
|
Chulkov, Evgueni V.
|
Tugushev, V. V.
Contributor: Томский государственный университет Физический факультет Кафедра физики металлов
Date: 2015
DOI: 10.1103/PhysRevB.91.075307
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi2Se3/ZnSe system.

Relationships: Show Relationship Browser for this Object
collection(s): Физический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Language: eng

Created: 27-05-2016

4117 Visitors

3831 Hits

347 Downloads

Физический факультет Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator