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Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description:
Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems
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Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012025 (1-5)
Type: статьи в журналах
Date: 2015
Description:
In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are di
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Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 164-173
Type: статьи в журналах
Date: 2015
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217
Type: статьи в журналах
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description:
The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol
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Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description:
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/
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Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 735-736
Type: статьи в сборниках
Date: 2015
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 739-740
Type: статьи в сборниках
Date: 2015
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)
Type: статьи в журналах
Date: 2015
Description:
This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur
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Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference book. [S. l.], 2015. P. 345
Type: статьи в сборниках
Date: 2015
Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description:
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto
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