Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | молекулярно-лучевая эпитаксия | квантовые точки

Add to Quick Collection   All 17 Results

Showing items 1 - 15 of 17.
Sort:
 Add All Items to Quick Collection
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Lozovoy, Kirill A.
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Add   Si/Ge-based photosensitive nanoheterostructures for optical communication systems
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Turapin, Alexey M. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Lozovoy, Kirill A.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 246-247
Type: статьи в журналах
Date: 2012
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Yatskiy, Alexey V.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 269-270
Type: статьи в журналах
Date: 2012
Add   Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Add   Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Add   Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Kalin, Eugeniy A. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 271-272
Type: статьи в журналах
Date: 2012
Add   Interaction between islands in kinetic models of epitaxial growth of quantum dots
Authors: Izhnin, Igor I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description: In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti ... More
Add   Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015
Add   The growth of SiGe nanostructures by molecular beam epitaxy
Authors: Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 203-205
Type: статьи в журналах
Date: 2013
Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
^