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Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description:
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency
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Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description:
Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description:
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in
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Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description:
This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum
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Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description:
This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S
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Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description:
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye
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Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description:
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier
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Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Source: Vacuum. 2018. Vol. 158. P. 136-140
Type: статьи в журналах
Date: 2018
Description:
The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer depo
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Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description:
The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t
... More