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Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description:
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye
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Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description:
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu
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Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Authors:
Voytsekhovskiy, Alexander V. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Gorn, Dmitriy Igorevich |
Kashirskii, Danila E. |
Lozovoy, Kirill A. |
Dirko, Vladimir V. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Sidorov, Georgiy Yu.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 112-113
Type: статьи в сборниках
Date: 2021
Description:
One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been
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Source: Journal of electronic materials. 2021. Vol. 50, № 8. P. 4599-4605
Type: статьи в журналах
Date: 2021
Description:
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it
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Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 44-
Type: статьи в сборниках
Date: 2021
Description:
The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscr
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Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337
Type: статьи в журналах
Date: 2023
Description:
The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t
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Source: Journal of communications technology and electronics. 2022. Vol. 67, № 3. P. 308-312
Type: статьи в журналах
Date: 2022
Description:
Dark currents in medium-wave nBn structures based on HgCdTe grown with the aid of molecular beam epitaxy on the (013) GaAs substrates are studied. The passivation of the surface of the side walls of t
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Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description:
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier
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Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description:
The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t
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