Электронная библиотека (репозиторий) Томского государственного университета
Kushnarev, Bogdan O.

Add to Quick Collection   All 4 Results

Showing items 1 - 4 of 4.
  • «
  • ←
  • 1
  • →
  • »
Sort:
 Add All Items to Quick Collection
Add   Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Chikiryaka, Andrei V. | Timashov, R. B. | Scheglov, Mikhail P. | Butenko, Pavel N. | Almaev, D. A. | Chernikov, Evgeniy V.
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Add   Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
Authors: Almaev, Aleksei V. | Nikolaev, Vladimir I. | Kopyev, Viktor V. | Shapenkov, Sevastian | Yakovlev, Nikita N. | Kushnarev, Bogdan O. | Pechnikov, Aleksei I. | Deng, Jinxiang | Izaak, Tatyana I. | Chikiryaka, Andrei V. | Scheglov, Mikhail P. | Zarichny, Anton
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description: The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor ... More
Add   Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
Authors: Nikolaev, Vladimir I. | Polyakov, Alexander | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I. | Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne ... More
Add   Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Authors: Polyakov, Alexander | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description: We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 ... More
  • «
  • ←
  • 1
  • →
  • »
^