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Source: Physica status solidi B. 2023. Vol. 260, № 4. P. 2200446 (1-7)
Type: статьи в журналах
Date: 2023
Description:
The article reports investigations into the microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a re
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Source: Solid state communications. 2023. Vol. 365. P. 115111 (1-8)
Type: статьи в журналах
Date: 2023
Description:
Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the
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Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356
Type: статьи в журналах
Date: 2022
Description:
A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen
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Source: Russian physics journal. 2022. Vol. 65, № 6. P. 909-923
Type: статьи в журналах
Date: 2022
Description:
The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented.
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Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
Type: статьи в журналах
Date: 2021
Description:
The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are
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Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 256-259
Type: статьи в сборниках
Date: 2020
Description:
In the study, the switching properties of avalanche GaAs S-diodes are investigated. We studied diode assemblies of various configurations. It is shown that when using two or more diodes connected in s
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Source: Technical physics letters. 2018. Vol. 44, № 6. P. 465-468
Type: статьи в журналах
Date: 2018
Description:
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acce
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Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190
Type: статьи в журналах
Date: 2018
Description:
The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi
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Source: Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Type: статьи в журналах
Date: 2018
Description:
Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electro
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Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2177-2185
Type: статьи в журналах
Date: 2018
Description:
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and ex
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916
Type: статьи в журналах
Date: 2018
Description:
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the
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Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description:
The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b
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Source: Chinese journal of physics. 2017. Vol. 55, № 1. P. 59-63
Type: статьи в журналах
Date: 2017
Description:
The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at tempe
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Source: Optics and spectroscopy. 2017. Vol. 123, № 6. P. 867-870
Type: статьи в журналах
Date: 2017
Description:
The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga2O3 crystals excited with a runaway electron beam and an excilamp with a wavelength of 222 nm were investig
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Source: Semiconductors. 2017. Vol. 51, № 2. P. 232-238
Type: статьи в журналах
Date: 2017
Description:
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence
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