In the study, the switching properties of avalanche GaAs S-diodes are investigated. We studied diode assemblies of various configurations. It is shown that when using two or more diodes connected in series, the edge of the voltage pulse can be sharpened to about 1 ns.
2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 256-259