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Type: монографии
Date: 2024
Description:
The monograph is generalization of the results of extensive research into structures and devices based on gallium arsenide with deep impurity centers carried out in Tomsk State University, the Siberia
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Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356
Type: статьи в журналах
Date: 2022
Description:
A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen
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Source: Russian physics journal. 2022. Vol. 65, № 6. P. 909-923
Type: статьи в журналах
Date: 2022
Description:
The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented.
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Source: Russian physics journal. 2021. Vol. 63, № 11. P. 2013-2024
Type: статьи в журналах
Date: 2021
Description:
The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on the literature sources published mainl
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Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2177-2185
Type: статьи в журналах
Date: 2018
Description:
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and ex
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