Conduction mechanism of metal-TiO2–Si structures

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DOI Доступ к ресурсу на сайте издателя			10.1016/j.cjph.2016.08.011

Title: Conduction mechanism of metal-TiO2–Si structures
Creator: Kalygina, V. M.
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Prudaev, Ilya A.
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Tolbanov, Oleg P.
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Atuchin, Victor V.
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Egorova, I. S.
Date: 2017
DOI: 10.1016/j.cjph.2016.08.011
Description: The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T = 283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.