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Authors:
Almaev, Aleksei V. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Chikiryaka, Andrei V. |
Yakovlev, Nikita N. |
Usseinov, Abay B. |
Karipbayev, Zhakyp T. |
Akilbekov, Abdirash T. |
Koishybayeva, Zhanymgul K. |
Popov, Anatoli I.
Source: Materials. 2023. Vol. 16, № 1. P. 342 (1-16)
Type: статьи в журналах
Date: 2023
Description:
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically
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Source: Physica scripta. 2022. Vol. 97, № 9. P. 095809
Type: статьи в журналах
Date: 2022
Description:
The main morphology parameters of microstrip Au/i-GaAs coplanar microwave transmission lines (CTL) with length lWinfluenced on its skin depth resistance R wide of δ and inductivity L are defined at fr
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Zinoviev, Mikhail M. |
Yudin, Nikolay N. |
Podzyvalov, Sergey N. |
Erzakova, Nadezhda N. |
Chikiryaka, Andrei V. |
Shcheglov, Mikhail P. |
Baalbaki, Houssain A. |
Olshukov, Alexey S.
Source: Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Type: статьи в журналах
Date: 2022
Description:
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4
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Source: Semiconductor science and technology. 2022. Vol. 37, № 105005
Type: статьи в журналах
Date: 2022
Description:
The results obtained here suggest that low-dose Co-60 gamma-irradiation (D-gamma similar to 140 Gy) has a complex effect on close AuNi/n-n(+)-GaN{0001} Schottky contacts. This manifests in the disappe
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Source: Scientific Reports [Еlectronic resource]. 2022. Vol. 12. P. 11302 (1-15)
Type: статьи в журналах
Date: 2022
Description:
In this work demostrates a unique method for determining the absolute value of the friction force of a nanoobject on the surface of a cell membrane using atomic force microscopy. The tribological prop
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Source: Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
Type: статьи в журналах
Date: 2021
Description:
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthe
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Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description:
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of
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Source: Superlattices and microstructures. 2021. Vol. 151. P. 106835 (1-12)
Type: статьи в журналах
Date: 2021
Description:
Cr2O3 thin films were synthesized by RF magnetron sputtering of a Cr target in an oxygen-argon plasma. The effect of annealing temperature on the structural, electrical, and gas-sensitive properties o
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Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description:
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub
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Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description:
Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap
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Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description:
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916
Type: статьи в журналах
Date: 2018
Description:
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the
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Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438
Type: статьи в журналах
Date: 2017
Description:
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t
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Source: Russian physics journal. 2015. Vol. 58, № 7. P. 996-1000
Type: статьи в журналах
Date: 2015
Description:
The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting o
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100S-1-98100S-6
Type: статьи в журналах
Date: 2015
Description:
In the present report we studied the distribution of surface potential of the HgCdTe epitaxial films grown by molecular beam epitaxy after the impact of picosecond electron beam and volume discharge i
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