Электронная библиотека (репозиторий) Томского государственного университета
Kolesnikova, Irina I.

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Add   Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology
Authors: Veale, Matthew C. | Booker, P. | Church, I. | Jones, L. L. | Lipp, J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Chsherbakov, Ivan | Kolesnikova, Irina I. | Lozinskaya, Anastassiya D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2022. Vol. 1025. P. 166083 (1-9)
Type: статьи в журналах
Date: 2022
Description: In this paper a new version of the HEXITEC spectroscopic imaging technology is presented. The HEXITEC ASIC maintains the same pixel electronics but, unlike the previous design, contains no I/O pads on ... More
Add   Effect of gallium arsenide charge carrier life time on the generation and detection efficiency of continuous and pulsed terahertz radiation
Authors: Kobtsev, Daniil A. | Tyazhev, Anton V. | Kolesnikova, Irina I. | Redkin, Ruslan A.
Source: Russian physics journal. 2021. Vol. 63, № 11. P. 1997-2003
Type: статьи в журналах
Date: 2021
Description: A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed. Their operating characteristics i ... More
Add   Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr
Authors: Lozinskaya, Anastassiya D. | Veale, Matthew C. | Kolesnikova, Irina I. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Wheater, R. M. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 2. P. P02026 (1-8)
Type: статьи в журналах
Date: 2021
Description: HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25oC, there may be benefits of running the ... More
Add   Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes
Authors: Kolesnikova, Irina I. | Kobtsev, Daniil A. | Redkin, Ruslan A. | Voevodin, Vladimir I. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Sarkisov, Yuri S. | Sarkisov, Sergey Yu. | Atuchin, Victor V.
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
Add   The visibility and stability of GaSe nanoflakes of about 50 layers on SiO2/Si wafers
Authors: Redkin, Ruslan A. | Kobtsev, Daniil A. | Kolesnikova, Irina I. | Bereznaya, Svetlana A. | Sarkisov, Yuri S. | Voevodin, Vladimir | Novikov, Vadim A. | Mihaylov, Timofei | Sarkisov, Sergey Yu.
Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description: GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub ... More
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