Электронная библиотека (репозиторий) Томского государственного университета

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Source: Crystals. 2023. Vol. 13, № 11. P. 1562 (1-18)
Type: статьи в журналах
Date: 2023
Description: Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparen ... More
Source: Russian physics journal. 2021. Vol. 63, № 11. P. 1997-2003
Type: статьи в журналах
Date: 2021
Description: A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed. Their operating characteristics i ... More
Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description: GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of ... More
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description: GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub ... More
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