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Source: Journal of surface investigation: X-ray, synchrotron and neutron techniques. 2022. Vol. 16, № 1. P. 140-144
Type: статьи в журналах
Date: 2022
Description:
The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are
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Source: Materials research express. 2020. Vol. 7, № 1. P. 015027 (1-9)
Type: статьи в журналах
Date: 2020
Description:
Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and
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Source: AIP Advances. 2020. Vol. 10, № 1. P. 015309-1-015309-7
Type: статьи в журналах
Date: 2020
Description:
Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to stud
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Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)
Type: статьи в журналах
Date: 2020
Description:
SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films
Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 36-41
Type: статьи в сборниках
Date: 2020
Description:
In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity depend
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Source: Russian physics journal. 2020. Vol. 63, № 2. P. 276-281
Type: статьи в журналах
Date: 2020
Description:
The paper presents the morphological, structural, and optical properties of nanostructured SnO (x) films
Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description:
The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and
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Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description:
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the
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Source: Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Type: статьи в журналах
Date: 2018
Description:
Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate
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Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description:
This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan
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Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description:
The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener
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Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103
Type: статьи в журналах
Date: 2015
Description:
Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan
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Source: Applied surface science. 2015. Vol. 354, Part B. P. 450-452
Type: статьи в журналах
Date: 2015
Description:
Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure
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Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description:
Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur
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