Электронная библиотека (репозиторий) Томского государственного университета
Timofeev, Vyacheslav A.

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Add   Infrared photoresponse of GeSiSn p–i–n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers
Authors: Timofeev, Vyacheslav A. | Skvortsov, Ilya V. | Mashanov, Vladimir I. | Bloshkin, Aleksei A. | Loshkarev, Ivan D. | Kirienko, Victor V. | Zalyalov, T. M. | Lozovoy, Kirill A.
Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
Type: статьи в журналах
Date: 2025
Description: Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of ... More
Add   Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films
Authors: Mashanov, Vladimir I. | Nikiforov, Alexander I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Korolkov, Ilya V. | Gavrilova, Tatiana A. | Yesin, Michail Yu. | Chetyrin, Igor A. | Timofeev, Vyacheslav A.
Source: Materials research express. 2020. Vol. 7, № 1. P. 015027 (1-9)
Type: статьи в журналах
Date: 2020
Description: Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and ... More
Add   Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism
Authors: Mashanov, Vladimir I. | Nikiforov, Alexander I. | Skvortsov, Ilya V. | Gavrilova, Tatiana A. | Gulyaev, Dmitry V. | Gutakovskii, Anton K. | Chetyrin, Igor A. | Timofeev, Vyacheslav A.
Source: AIP Advances. 2020. Vol. 10, № 1. P. 015309-1-015309-7
Type: статьи в журналах
Date: 2020
Description: Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to stud ... More
Add   Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy
Authors: Timofeev, Vyacheslav A. | Mashanov, Vladimir I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Volodin, Vladimir A. | Gulyaev, Dmitry V. | Chetyrin, Igor A. | Korolkov, Ilya V. | Nikiforov, Alexander I.
Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)
Type: статьи в журналах
Date: 2020
Description: SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C ... More
Add   Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface
Authors: Yesin, Michael Yu. | Nikiforov, Alexander I. | Deryabin, Alexander S. | Timofeev, Vyacheslav A.
Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 36-41
Type: статьи в сборниках
Date: 2020
Description: In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity depend ... More
Add   Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers
Authors: Nikiforov, Alexander I. | Tuktamyshev, Artur R. | Mashanov, Vladimir I. | Yesin, Michail Yu. | Bloshkin, Aleksei A. | Timofeev, Vyacheslav A.
Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description: The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the ... More
Add   Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy
Authors: Timofeev, Vyacheslav A. | Zinovyev, V. A. | Teys, Sergey A. | Pchelyakov, Oleg P. | Nikiforov, Alexander I.
Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103
Type: статьи в журналах
Date: 2015
Description: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan ... More
Add   Surface structure of thin pseudomorphous GeSi layers
Authors: Nikiforov, Alexander I. | Timofeev, Vyacheslav A. | Pchelyakov, Oleg P.
Source: Applied surface science. 2015. Vol. 354, Part B. P. 450-452
Type: статьи в журналах
Date: 2015
Description: Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure ... More
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