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		Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
	    
	
                  
            Type: статьи в журналах
          
        
                  
            Date: 2025
          
        
                                      
            Description:
                        Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of 
                          
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		Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 36-41
	    
	
                  
            Type: статьи в сборниках
          
        
                  
            Date: 2020
          
        
                                      
            Description:
                        In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity depend
                          
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