Электронная библиотека (репозиторий) Томского государственного университета
Skvortsov, Ilya V.

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Add   Infrared photoresponse of GeSiSn p–i–n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers
Authors: Timofeev, Vyacheslav A. | Skvortsov, Ilya V. | Mashanov, Vladimir I. | Bloshkin, Aleksei A. | Loshkarev, Ivan D. | Kirienko, Victor V. | Zalyalov, T. M. | Lozovoy, Kirill A.
Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
Type: статьи в журналах
Date: 2025
Description: Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of ... More
Add   Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism
Authors: Mashanov, Vladimir I. | Nikiforov, Alexander I. | Skvortsov, Ilya V. | Gavrilova, Tatiana A. | Gulyaev, Dmitry V. | Gutakovskii, Anton K. | Chetyrin, Igor A. | Timofeev, Vyacheslav A.
Source: AIP Advances. 2020. Vol. 10, № 1. P. 015309-1-015309-7
Type: статьи в журналах
Date: 2020
Description: Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to stud ... More
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