Электронная библиотека (репозиторий) Томского государственного университета
эпитаксиальные пленки | статьи в журналах | Izhnin, Igor I.

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Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. II. Discrete mobility spectrum analysis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description: The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c ... More
Add   Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, Jerzy | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More
Add   Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description: Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl ... More
Add   Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Syvorotka, I. I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Bonchyk, A. Yu. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V.
Source: Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Type: статьи в журналах
Date: 2020
Description: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
Add   Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Add   Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Add   Electrical characteristics of epitaxial MCT after As+ implantation
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Dvoretsky, Sergei A. | Smirnov, P. | Izhnin, Igor I.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati ... More
Add   Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Izhnin, Igor I. | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves ... More
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