Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation

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Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation	767 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/830/1/012081

Title: Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
Creator: Voytsekhovskiy, Alexander V.
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Dzyadukh, Stanislav M.
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Izhnin, Igor I.
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Nesmelov, Sergey N.
Date: 2017
DOI: 10.1088/1742-6596/830/1/012081
Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers in the near-surface layer of the epitaxial films after ion implantation and after ion etching were close to 5.88×1016 cm-3 and 2.47×1017 cm-3, respectively.