Electrical characteristics of epitaxial MCT after As+ implantation

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Electrical characteristics of epitaxial MCT after As+ implantation	790 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/830/1/012083

Title: Electrical characteristics of epitaxial MCT after As+ implantation
Creator: Voytsekhovskiy, Alexander V.
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Korotaev, A. G.
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Lyapunov, D. V.
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Dvoretsky, Sergei A.
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Smirnov, P.
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Izhnin, Igor I.
Date: 2017
DOI: 10.1088/1742-6596/830/1/012083
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.