Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | молекулярно-лучевая эпитаксия | квантовые точки

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Add   Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Lozovoy, Kirill A.
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015
Add   The growth of SiGe nanostructures by molecular beam epitaxy
Authors: Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 203-205
Type: статьи в журналах
Date: 2013
Add   Si/Ge-based photosensitive nanoheterostructures for optical communication systems
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Turapin, Alexey M. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Lozovoy, Kirill A.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 246-247
Type: статьи в журналах
Date: 2012
Add   Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Yatskiy, Alexey V.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 269-270
Type: статьи в журналах
Date: 2012
Add   Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Kalin, Eugeniy A. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 271-272
Type: статьи в журналах
Date: 2012
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system
Authors: Dirko, Vladimir V. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description: In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy ... More
Add   Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Add   Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
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