Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | Voytsekhovskiy, Alexander V.

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Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Interaction between islands in kinetic models of epitaxial growth of quantum dots
Authors: Izhnin, Igor I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description: In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti ... More
Add   High-sensitive two-layer photoresistors based on р-CdxHg1-HGxTe with a converted near-surface layer
Authors: Ismailov, N. D. | Talipov, Niyaz Kh. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2186-2192
Type: статьи в журналах
Date: 2018
Description: The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-Cd x Hg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment ... More
Add   Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description: In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with ... More
Add   Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
Authors: Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Izhnin, Ihor I.
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 02001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructure ... More
Add   Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots
Authors: Izhnin, Igor I. | Pishchagin, Anton A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Fitsych, Olena I.
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More
Add   Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Kalin, Eugeniy A. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 271-272
Type: статьи в журналах
Date: 2012
Add   The growth of SiGe nanostructures by molecular beam epitaxy
Authors: Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 203-205
Type: статьи в журналах
Date: 2013
Add   Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, O. I. | Bonchyk, A. Yu. | Savytskyy, H. V. | Mynbaev, K. D. | Varavin, V. S. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Voytsekhovskiy, Alexander V. | Yakushev, M. V. | Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Add   Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)
Type: статьи в журналах
Date: 2015
Description: This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur ... More
Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More
Add   Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.
Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description: Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons ... More
Add   Electrical properties of the V-defects of epitaxial HgCdTe
Authors: Novikov, Vadim A. | Bezrodnyy, Dmitriy A. | Voytsekhovskiy, Alexander V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Grigoryev, Denis V.
Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438
Type: статьи в журналах
Date: 2017
Description: The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t ... More
Add   Unipolar semiconductor barrier structures for infrared photodetector arrays (Review)
Authors: Burlakov, I. D. | Kulchitskii, N. A. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 9. P. 1084-1091
Type: статьи в журналах
Date: 2021
Description: We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to redu ... More
Add   Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, Jerzy | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More
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