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Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description:
Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems
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Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description:
In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of
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Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 246-247
Type: статьи в журналах
Date: 2012
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Source: Surface science. 2020. Vol. 696. P. 121594 (1-9)
Type: статьи в журналах
Date: 2020
Description:
The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description:
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 269-270
Type: статьи в журналах
Date: 2012
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description:
Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic
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Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description:
In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti
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Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description:
In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with
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