Molecular dynamics simulations of the growth of Ge on Si

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DOI Доступ к ресурсу на сайте издателя			10.1016/j.susc.2020.121594

Title: Molecular dynamics simulations of the growth of Ge on Si
Creator: Lloyd, Adam
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Smith, Roger
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Lozovoy, Kirill A.
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Voytsekhovskiy, Alexander V.
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Kokhanenko, Andrey P.
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Zhoua, Ying
Date: 2020
DOI: 10.1016/j.susc.2020.121594
Description: The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using

Created: 15-03-2021

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Радиофизический факультет Molecular dynamics simulations of the growth of Ge on Si