Электронная библиотека (репозиторий) Томского государственного университета
Gorn, Dmitriy Igorevich

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Add   Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S ... More
Add   Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337
Type: статьи в журналах
Date: 2023
Description: The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t ... More
Add   Unipolar barrier structures based on HgCdTe for infrared detection
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Kashirskii, Danila E. | Lozovoy, Kirill A. | Dirko, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 112-113
Type: статьи в сборниках
Date: 2021
Description: One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been ... More
Add   Unipolar semiconductor barrier structures for infrared photodetector arrays (Review)
Authors: Burlakov, I. D. | Kulchitskii, N. A. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 9. P. 1084-1091
Type: статьи в журналах
Date: 2021
Description: We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to redu ... More
Add   Structure and dynamics of zooplankton of the Eastern Mediterranean (Matruch province, Egypt)
Authors: Simakova, Anastasia V. | Noskov, J. S. | Babkina, Irina B. | Baghirov, R.T-o. | Gorn, Dmitriy Igorevich | Hamouda, Amr
Source: Концептуальные и прикладные аспекты научных исследований и образования в области зоологии беспозвоночных : сборник статей V Международной конференции, 26-28 октября 2020 г., г. Томск, Россия. Томск, 2020. С. 168-170
Type: статьи в сборниках
Date: 2020
Description: The species diversity of zooplankton in the Eastern Mediterranean (Matruh
Add   Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures
Authors: Izhnin, A. I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Semakova, A. A. | Bazhenov, N. L. | Mynbaev, Karim D. | Zegrya, G. G. | Izhnin, Igor I.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 617-622
Type: статьи в журналах
Date: 2019
Description: Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures wer ... More
Add   Analysis of the nBn-type barrier structures for infrared photodiode detectors
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Journal of communications technology and electronics. 2017. Vol. 62, № 3. P. 314-316
Type: статьи в журналах
Date: 2017
Description: Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches ... More
Add   Admittance investigation of MIS structures with GgTe-based single quantum wells
Authors: Izhnin, Igor I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolaj N. | Nesmelov, Sergey N.
Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum ... More
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)
Type: статьи в журналах
Date: 2016
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Admittance of HgCdTe MIS structures with HgTe single quantum well
Authors: Izhnin, I. I. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Fitsych, E. I.
Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015. Lviv, 2015. P. 364
Type: статьи в сборниках
Date: 2015
Add   Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe
Authors: Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M. | Nesmelov, Sergey N. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 164-173
Type: статьи в журналах
Date: 2015
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 739-740
Type: статьи в сборниках
Date: 2015
Add   Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Advanced Materials Research. 2014. Vol. 1040. P. 34-38
Type: статьи в журналах
Date: 2014
Add   Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 206-208
Type: статьи в журналах
Date: 2013
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