Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit
Authors: Barko, A. V. | Levashkin, A. G. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 9-11
Type: статьи в сборниках
Date: 2016
Add   Admittance of barrier structures based on mercury cadmium telluride
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Add   Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Kalin, Eugeniy A. | Nikiforov, Alexander I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 241-242
Type: статьи в журналах
Date: 2013
Add   Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 378-
Type: статьи в сборниках
Date: 2021
Description: We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV e ... More
Add   Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description: The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in ... More
Add   Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Morgiel, Jerzy | Swiatek, Zbigniew | Korotaev, Alexander G. | Fitsych, Olena I. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V.
Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstracts. Tomsk, 2020. P. 460
Type: статьи в сборниках
Date: 2020
Add   Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description: Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl ... More
Add   Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe
Authors: Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M. | Nesmelov, Sergey N. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 164-173
Type: статьи в журналах
Date: 2015
Add   Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description: The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency ... More
Add   Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, Denis V. | Fitsych, Olena I. | Kurbanov, Kurban R.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More
Add   Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217
Type: статьи в журналах
Date: 2015
Add   Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 421
Type: статьи в сборниках
Date: 2020
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)
Type: статьи в журналах
Date: 2016
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
Authors: Syvorotka, I. I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Izhnin, Igor I.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Add   Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation
Authors: Sredin, Victor G. | Ramakoti, Ravi | Ananin, Oleg B. | Voytsekhovskiy, Alexander V. | Melekhov, Andrey P.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1009-1011
Type: статьи в сборниках
Date: 2020
Description: The features of the external photoelectric effect caused by soft x-ray radiation of a laser plasma source in CdxHg1-xTe solid solutions are considered. The possibility of a contribution from the ioniz ... More

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