Электронная библиотека (репозиторий) Томского государственного университета
Dzyadukh, Stanislav M.

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Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Physica status solidi A : applications and materials science. 2020. Vol. 217, № 6. P. 1900847 (1-6)
Type: статьи в журналах
Date: 2020
Description: The organic light-emitting device (OLED) structures based on layer (2,8-bis[N,Ndi(
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description: Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap ... More
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam ... More
Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description: In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper ... More
Source: Russian physics journal. 2019. Vol. 61, № 11. P. 2126-2134
Type: статьи в журналах
Date: 2019
Description: For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and ... More
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description: Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013 ... More

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