Электронная библиотека (репозиторий) Томского государственного университета
Nikiforov, Alexander I.

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Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description: The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and ... More
Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description: The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the ... More
Source: Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Type: статьи в журналах
Date: 2018
Description: Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate ... More
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener ... More
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103
Type: статьи в журналах
Date: 2015
Description: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan ... More
Source: Applied surface science. 2015. Vol. 354, Part B. P. 450-452
Type: статьи в журналах
Date: 2015
Description: Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure ... More
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 241-242
Type: статьи в журналах
Date: 2013
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